Field Plate Ldmos

A low on-resistance buried current path SOI p-channel LDMOS

A low on-resistance buried current path SOI p-channel LDMOS

US9450074B1 - LDMOS with field plate connected to gate - Google Patents

US9450074B1 - LDMOS with field plate connected to gate - Google Patents

Double trenches LDMOS with trapezoidal gate

Double trenches LDMOS with trapezoidal gate

A numerical study of field plate configurations in RF SOI LDMOS

A numerical study of field plate configurations in RF SOI LDMOS

Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low

Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

RF LDMOS Power Transistor Technology For Pulsed L-Band Transmitters

RF LDMOS Power Transistor Technology For Pulsed L-Band Transmitters

Transistor Technologies for High Efficiency and Linearity

Transistor Technologies for High Efficiency and Linearity

Patent Report: | US10141440 | Drift-region field control of an LDMOS

Patent Report: | US10141440 | Drift-region field control of an LDMOS

Forward on-resistance characteristics of LDMOS devices with the

Forward on-resistance characteristics of LDMOS devices with the

Double trenches LDMOS with trapezoidal gate

Double trenches LDMOS with trapezoidal gate

PDF) Improvement of electrical characteristics in LDMOS by the

PDF) Improvement of electrical characteristics in LDMOS by the

Figure 7 from Integrated 85V rated complimentary LDMOS devices

Figure 7 from Integrated 85V rated complimentary LDMOS devices

AMP PP 2017 0503 indd

AMP PP 2017 0503 indd

An analytical model for the surface electrical field distribution of

An analytical model for the surface electrical field distribution of

A Review of GaN on SiC High Electron-Mobility Power Transistors

A Review of GaN on SiC High Electron-Mobility Power Transistors

An improved SOI LDMOS with buried field plate - ScienceDirect

An improved SOI LDMOS with buried field plate - ScienceDirect

PDF) Degradation analysis in SOI LDMOS transistors with steep

PDF) Degradation analysis in SOI LDMOS transistors with steep

Evaluation of a

Evaluation of a

Extended-p Stepped Gate LDMOS for Improved Performance

Extended-p Stepped Gate LDMOS for Improved Performance

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

Figure 4 from Improvement of electrical characteristics in LDMOS by

Figure 4 from Improvement of electrical characteristics in LDMOS by

Research Article The Investigation of Field Plate Design in 500 V

Research Article The Investigation of Field Plate Design in 500 V

A novel SOI LDMOS with substrate field plate and variable-k

A novel SOI LDMOS with substrate field plate and variable-k

S-Band Radar LDMOS Transistors EuMW2009

S-Band Radar LDMOS Transistors EuMW2009

High figure-of-merit SOI power LDMOS for power integrated circuits

High figure-of-merit SOI power LDMOS for power integrated circuits

Simulation-based performance analysis of an ultra-low specific on

Simulation-based performance analysis of an ultra-low specific on

Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low

Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low

Impacts of ESD Reliability by Different Layout Engineering in the

Impacts of ESD Reliability by Different Layout Engineering in the

Improvement of SOI Trench LDMOS Performance With Double Vertical

Improvement of SOI Trench LDMOS Performance With Double Vertical

SSB CW 1000WHF power amplifier ‹ SPARKY's Blog

SSB CW 1000WHF power amplifier ‹ SPARKY's Blog

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating

Patent US6531355 - LDMOS device with self-aligned RESURF region

Patent US6531355 - LDMOS device with self-aligned RESURF region

AMP PP 2017 0503 indd

AMP PP 2017 0503 indd

Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI

Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI

AMP PP 2017 0503 indd

AMP PP 2017 0503 indd

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Simulation-based performance analysis of an ultra-low specific on

Simulation-based performance analysis of an ultra-low specific on

LDMOS LDMOS LDMOS Power B

LDMOS LDMOS LDMOS Power B

The Simulation study of the SOI Trench LDMOS with Lateral Super Junction

The Simulation study of the SOI Trench LDMOS with Lateral Super Junction

Novel high-<em>K</em> with low specific on-resistance high voltage

Novel high-K with low specific on-resistance high voltage

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Evaluation of a

Evaluation of a

Cross section of conventional RF power LDMOS transistors on thick

Cross section of conventional RF power LDMOS transistors on thick

Gallium Nitride RF Technology Advances and Applications

Gallium Nitride RF Technology Advances and Applications

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Extended-p Stepped Gate (ESG) LDMOS for Improved Performance

Figure 7 from Improvement of electrical characteristics in LDMOS by

Figure 7 from Improvement of electrical characteristics in LDMOS by

Numerical investigation of the total SOA of trench field-plate LDMOS

Numerical investigation of the total SOA of trench field-plate LDMOS

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

A Novel Contact Field Plate Application in Drain- Extended-MOSFET

A Novel Contact Field Plate Application in Drain- Extended-MOSFET

AMP PP 2017 0503 indd

AMP PP 2017 0503 indd

Electrical Characteristics of a High-voltage P-channel LDMOSFET

Electrical Characteristics of a High-voltage P-channel LDMOSFET

Electronics | Free Full-Text | Review of the Recent Progress on GaN

Electronics | Free Full-Text | Review of the Recent Progress on GaN

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Patent US6531355 - LDMOS device with self-aligned RESURF region

Patent US6531355 - LDMOS device with self-aligned RESURF region

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets

Schematic cross section of the LDMOS boost transistor  The field

Schematic cross section of the LDMOS boost transistor The field

Schematic cross section of the LDMOS boost transistor  The field

Schematic cross section of the LDMOS boost transistor The field

N-Channel laterally diffused metal oxide semiconductor or vertically

N-Channel laterally diffused metal oxide semiconductor or vertically

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Electronics | Free Full-Text | Evaluation of LDMOS Figure of Merit

Ultralow specific ON-resistance high-k LDMOS with vertical field

Ultralow specific ON-resistance high-k LDMOS with vertical field

PDF) The boost transistor: A field plate controlled LDMOST

PDF) The boost transistor: A field plate controlled LDMOST

Evaluation of a

Evaluation of a

PDF) A numerical study of field plate configurations in RF SOI LDMOS

PDF) A numerical study of field plate configurations in RF SOI LDMOS

A novel P-channel SOI LDMOS structure with non-depletion potential

A novel P-channel SOI LDMOS structure with non-depletion potential

High-voltage (100 V) Chipfilm™ single-crystal silicon LDMOS

High-voltage (100 V) Chipfilm™ single-crystal silicon LDMOS

An improved SOI LDMOS with buried field plate - ScienceDirect

An improved SOI LDMOS with buried field plate - ScienceDirect

Linearity and speed optimization in SOI LDMOS using gate engineering

Linearity and speed optimization in SOI LDMOS using gate engineering

US9450074B1 - LDMOS with field plate connected to gate - Google Patents

US9450074B1 - LDMOS with field plate connected to gate - Google Patents

Impact of Poly Field Plate Dimension Towards LDMOS Performance

Impact of Poly Field Plate Dimension Towards LDMOS Performance

Double trenches LDMOS with trapezoidal gate

Double trenches LDMOS with trapezoidal gate

Figure I from Application of field plate in SLOP-LDMOS - Semantic

Figure I from Application of field plate in SLOP-LDMOS - Semantic

A low on-resistance buried current path SOI p-channel LDMOS

A low on-resistance buried current path SOI p-channel LDMOS

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

A novel SOI LDMOS with substrate field plate and variable-k

A novel SOI LDMOS with substrate field plate and variable-k

US20140231911A1 - Ldmos device with double-sloped field plate

US20140231911A1 - Ldmos device with double-sloped field plate

Transistor Technologies for High Efficiency and Linearity

Transistor Technologies for High Efficiency and Linearity

Thermal Conductivity of SOI LDMOS Device

Thermal Conductivity of SOI LDMOS Device

Research Article The Investigation of Field Plate Design in 500 V

Research Article The Investigation of Field Plate Design in 500 V

a) The electric field distribution of SON-LDMOS

a) The electric field distribution of SON-LDMOS

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

Ultralow specific ON-resistance high-k LDMOS with vertical field plate

Thermal conductivity of SOI LDMOS device Yan Xiong , Yushu Lai

Thermal conductivity of SOI LDMOS device Yan Xiong , Yushu Lai

Improving the Gate-Induced Drain Leakage and On-State Current of Fin

Improving the Gate-Induced Drain Leakage and On-State Current of Fin

Evaluation of a

Evaluation of a

LATERAL POWER MOSFETS HARDENED AGAINST SINGLE EVENT RADIATION

LATERAL POWER MOSFETS HARDENED AGAINST SINGLE EVENT RADIATION

Characterization and Modeling of High-Voltage LDMOS Transistors

Characterization and Modeling of High-Voltage LDMOS Transistors

AMP PP 2017 0503 indd

AMP PP 2017 0503 indd

a) The electric field distribution of SON-LDMOS

a) The electric field distribution of SON-LDMOS

Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide

Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide

Academic OneFile - Document - Improving breakdown voltage for a

Academic OneFile - Document - Improving breakdown voltage for a

Control of hot carrier degradation in LDMOS devices by a dummy gate

Control of hot carrier degradation in LDMOS devices by a dummy gate

Charge control (superjunction) trench LDMOS cross sections  (a) SOI

Charge control (superjunction) trench LDMOS cross sections (a) SOI

PowerPoint 프레젠테이션

PowerPoint 프레젠테이션

2 2 Device Design Techniques

2 2 Device Design Techniques

Thinking Thin: NXP's EZ-HV-SOI – SOI Industry Consortium

Thinking Thin: NXP's EZ-HV-SOI – SOI Industry Consortium

Forward on-resistance characteristics of LDMOS devices with the

Forward on-resistance characteristics of LDMOS devices with the

Gallium Nitride RF Technology Advances and Applications

Gallium Nitride RF Technology Advances and Applications

Open Access proceedings Journal of Physics: Conference series

Open Access proceedings Journal of Physics: Conference series

HV的結構與原理–DDDMOS or LDMOS? - 每日頭條

HV的結構與原理–DDDMOS or LDMOS? - 每日頭條